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 HSM126S
Silicon Schottky Barrier Diode for System Protection
REJ03G0174-0400Z (Previous: ADE-208-111C) Rev.4.00 Jan.28.2004
Features
* HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and - surge. * Low VF and low leakage current. * MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSM126S Laser Mark S14 Package Code MPAK
Pin Arrangement
3 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2
2 (Top View)
1
Rev.4.00, Jan.28.2004, page 1 of 5
HSM126S
Absolute Maximum Ratings *3
(Ta = 25C)
Item Repetitive peak reverse voltage Average forward current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. Sine wave, Two device total 2. 50 Hz half sine wave 1 pulse 3. Per one device Symbol VRRM IO * Tj Tstg
1 2
Value 20 200 2 125 -55 to +125
Unit V mA A C C
IFSM *
Electrical Characteristics *1
(Ta = 25C)
Item Reverse current Forward voltage Capacitance Note: Symbol IR VF C Min -- Typ 40 Max 2.0 0.35 -- Unit A V pF Test Condition VR = 5 V IF = 10 mA VR = 0 V, f = 1 MHz
1. Per one device
Rev.4.00, Jan.28.2004, page 2 of 5
HSM126S
Main Characteristic
10 Pulse test 1.0 10-3 10-2 Pulse test
10-1
Ta = 75C
Reverse current IR (A)
Forward current IF (A)
10-4
Ta = 75C
10-2
Ta = 25C
10-5
Ta = 25C
10-3
10-4
10-6
10-5
0
0.2
0.4
0.6
0.8
1.0
10-7
0
5
10
15
20
25
30
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f = 1MHz Pulse test 100
Capacitance C (pF)
10
1.0 0.1
1.0 Reverse voltage VR (V)
10
Fig.3 Capacitance vs. Reverse voltage
Rev.4.00, Jan.28.2004, page 3 of 5
HSM126S
Example of application circuite
SBD (EX. HSM126S) Vcc D1 Input R D2
0.35V
Vin
IC / LSI
+ Surge
Vcc
GND GND
- Surge 0.35V
Built-in diode * VF = 0.7V *
Rev.4.00, Jan.28.2004, page 4 of 5
HSM126S
Package Dimensions
As of January, 2003
Unit: mm
(0.65)
0.10 3-0.4 + 0.05 -
0.16 - 0.06
+ 0.10
1.5 0.15
+ 0.2 - 0.6
0 - 0.1
(0.95) (0.95) 1.9 0.2
0.3 2.8 + 0.1 -
(0.3)
+ 0.2 1.1 - 0.1
(0.65)
2.8
Package Code JEDEC JEITA Mass (reference value)
MPAK -- Conforms 0.011 g
Rev.4.00, Jan.28.2004, page 5 of 5
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0


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